MIS Contacts in CdSe Nuclear Radiation Detectors
CdSe核辐射探测器中的MIS接触电极

The properties of MIS(metal-insulator-semiconductor) contacts in CdSe nuclear radiation detectors at room temperature are investigated by measuring the leaka ge current of CdSe detectors.It is shown that electrons can be injected from cat hode into CdSe wafers by means of surface trap levels and thermal exciting,and t he more the surface trap levels,the lager the leakage current of CdSe detector.T he density of surface trap levels can be lowered by annealing,so the leakage cur rent of CdSe detectors can be decreased and the energy resolution can be improve d too.