Mechanism of Improving Electric Performance of Device by Open-Tube Gallium Diffusion
开管扩镓改善器件电参数性能的机理分析

The theory of the technics of open tube gallium diffusion and gallium diffusion are set forth,and the relationship between gallium diffusion and electric parameters of device is studied,and the mechanism to improve device performance is analyzed.It is proved from the experiment and practice that by using SiO 2/Si system and the technics of open tube gallium diffusion the surface of gallium diffused silicon flake is well distributed and well repeated,uniformity of gallium impurity is well distributed,the parameter of device performance is improved obviously,the consistency of electric parameter is hieghtened and the rate of finished product is improved.