Effect of Irradiation Induced Heterointerface State Charges on 2DEG Transport Property in AlGaN/GaN Heterostructures
AlGaN/GaN异质结辐射感生界面态电荷对二维电子气输运的影响

Based on the Coulomb scattering principle between charged centers and free carriers,a mobility model limited by scattering of irradiation induced heterointerface state charges in AlGaN/GaN heterostructure is presented.The dependences of the mobility component from heterointerface state charges scattering on its charge density are calculated with various two-dimensional electron gas densities (N s) .The influence of irradiation induced heterointerface state charges scattering on total initial mobility is analyzed by means of Matthiessen's rule.The calculated results show that irradiation induced heterointerface state charges,after reaching a critical value,can evidently degrade total mobility,and a certain extent increaseing 2DEG sheet density (N s) can restrain the scattering effect of heterointerface state charge.