Forward Characteristics of 6H-SiC Schottky Contacts
6H-SiC Schottky二极管的正向特性

An analytical model for forward characteristics of SiC Schottky contacts is developed taking into account the barrier inhomogeneities and interfacial layer theory.It is suggested that electrons trapped in epitaxial layer defects at the SiC/metal interface can give rise to fluctuations in the surface potential and result in lowering of the barrier height in the localized region,and thus affect the electrical I-V characteristics of the Schottky contacts.The voltage drop across the interfacial layer will raise the effective barrier height in the forward bias.The proposed model can explain the forward characteristics observed in 6H-SiC/Ti Schottky contacts from 297K to 473K.The results of experiments show good agreement with the model.The model is more suitable for SiC Schottky diode working in a wide temperature range.The increase in barrier height and decrease of ideality factor with increase of temperature are interpreted theoretically assuming a Gaussian distribution of the barrier heights.