Study of ECR-Plasma Cleaning and Nitridation of Sapphire Substrate by RHEED
蓝宝石衬底的ECR等离子体清洗与氮化的RHEED研究

The cleaning and nitridation effect of hydrogen and nitrogen ECR plasma for sapphire substrate are studied by analyzing RHEED image. The results indicate that we can markedly improve the cleaning effect of sapphire substrate by adding a small amount of nitrogen into ECR hydrogen plasma,thereby we can obtain smooth and clear substrate surface.And we adopt ECR nitrogen plasma to nitride sapphire substrate which was cleaned with ECR plasma of hydrogen added with nitrogen for 20min prior to the adoption,then we can observe clear RHEED stripes of AlN nucleation layer.Furthermore the crystal quality of GaN buffer layer is the best.