Influence of Thermal Annealing on Deep Levels in MBE-Grown High Purity GaAs Thin Films
热退火对分子束外延生长的高纯GaAs薄膜中深能级的影响

Deep levels in MBE-Grown high purity GaAs thin films have been studied by the DeepLevel Transient Spectroscopy (DLTS).The high purity GaAs thin films with gold electrodeswere annealed at different temperatures, and the corresponding DLTS peaks changed both inposition and in amplitude .All of these are attributed to result from the reaction betweenthe gold electrodes and GaAs thin filn during annealing. After the reactant is etched awayby mesa-etching process for device fabrication, the DLTS peaks are finally degenerated into asingle peak.The above phenomena have been analysed and discussed by measuring I-V char-acteristics.