Design of RTD-Based TSRAM
基于共振隧穿二极管的TSRAM设计(英文)

A RTD-based TSRAM cell is introduced.The mechanism of different types of access transistors in this cell is described and NMOS is found most suitable from consideration of the cell size and power consumption.The architecture of a TSRAM system is presented.Simulation results show that the RTD-based TSRAM has advanced characteristics of small area,low power,and high speed.