Anomalous Diffusion of Implanted Boron in Preamorphized Silicon
预非晶化硅中注入硼的异常扩散

Near the amorphous-crystal interface in preamorphized silicon, there is a heavily damagedlayer of about 20 nm thick containing a lot of extended defects.The layer retards the diffusionof excess interstitials into the amorphous region coming from the tail damaged region,where interstitials is supersaturated due to dissolutior of the clusters.Therefore, the anomalousdiffusion of boron is greatly reduced. The anomalous diffusion can he eliminated if the thicknessof the heavily damaged layer is increased by secondary silicon implantation at properconditions.We have provided for the first time an experime(?)tal evidence for the model ofretardation of the boron anomalous diffusion in the preamorphized region.