I-V Characteristics of Au-GaN Schottky Junction
Au-GaN肖特基结的伏安特性

Au\|GaN Schottky junction has been fabricated on n\|GaN materials by MOCVD and MBE.I\|V characteristics of the Schottky junctions have been determined at room temperature.It is shown that Schottky junction characteristics are seriously affected by the carrier concentration of GaN materials.