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半导体学报 2005
Numerical Study of Transport Phenomena in a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets
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Abstract:
Two-dimensional numerical study on transport phe nomena in a radial flow MOCVD reactor with three-separate vertical inlets is conducted.By varying the reactor geometries,inlet flow rates,gas pressure and wall temperature,the corresponding velocity,temperature and concentration fields inside the reactor are calculated.It is found that recirculation rolls originate from the flow separation near the bend of the inlet tube,while buoyancy forces due to temperature difference enhance the rolls.Increasing the flow at the mid tube compresses the rolls whereas increasing the flows at the inner and outer tubes enhances the rolls.The optimum conditions of transport process for film growth are:decreasing the distance between the substrate and top wall,lengthening the gas distributor,increasing the flow rate of the mid tube,lowering the total pressure and the temperature difference between the substrate and celling.