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半导体学报 2005
A Simple Model of Rp Defects Evolution
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Abstract:
A model of R p defects evolution based on first order kinetic equations is proposed to describe the phenomenon of boron-peak evolution during annealing time after ion implanting.Simulation results show that the defects change exponentially in different annealing time,and the constant of exponential time is correlative with the binding energy between defects and interstitials,is 2.41eV in this model.The similar tendency and approximate evolution time show that the evolution of boron-peak is correlative with R P defects.
