Study of Recombination Centre Levels In N-Type LPE GaAs Layers Irradiated by Electrons
电子辐照N型LPE-GaAs层中复合中心能级的研究

Using deep-level transient spectroscopy, surface photovoltage and the routine measurements,the defects induced by different doses of elec(?)ron irradiation with 1MeV energy in theN-type LPE GaAs layers, and their isochronal annealing behavior at temperatures rangingfrom 400K to 550K have been systematically studiec.The variations of defect density andminority carrier diffusion length are discussed as the electron radiation dose increases andafter isochronal annealing. It has been proved both theoretically and experimentally for the firsttime that the level E_3 is the main recombination cen re level in all of the defect energy levelsinduced by electron radiation.It is also shown that the main recombination centre level amongall the defect levels can be effectively identified by using Shockley-Read-Hall formula.