Binding Energy and Photoionization of Hydrogenic Impurities in GaAs/Ga1-xAlxAs Quantum Well Wires
GaAs/Ga_(1-x)Al_xAs量子阱线中类氢杂质的束缚能和光致电离截面(英文)

The binding energy and the photon energy dependence of the photoionization cross-section are calculated for a hydrogenic impurity in GaAs/Ga 1-xAl xAs quantum well wires.The correlation between confined and non-confined direction of the wire in the variational wave function is taken into account.The results show that the photoionization cross-sections are affected by the width of the wire and that their magnitudes are larger than those in infinite potential quantum well wires.In comparison with previous's results,the variational wave function improves the binding energy and decreases the value of photoionization cross-sections of the hydrogenic impurities,which makes the results more reasonable.