Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique
采用局域注氧技术制备的新型DSOI场效应晶体管的热特性(英文)

DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and measurement.Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts. At the same time,the electrical advantages of SOI devices can stay.The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub micron realm.