Effect of SiO2/SiC Interface on Inversion Channel Electron Mobility of 4H-SiC n-MOSFET
SiO_2/SiC界面对4H-SiC n-MOSFET反型沟道电子迁移率的影响

A model for inversion channel electron mobility of 4H-SiC n-MOSFET is proposed based on device physics of semiconductor.Effect of interface states,lattice,ionized impurities,and surface roughness scatterings on the mobility is considered in this model,where the interface-state scattering mechanism includes electrically-shielded effect of carriers.Influence of some factors,such as interface states,surface roughness and so on,on the mobility is investigated using the model.Simulated results indicate that the interface states and the surface roughness are major influence on inversion channel electrons mobility,in which the maximum mobility depends on the interface-state density,and surface-roughness scattering limits the electron mobility under high field.The model can be well used for device simulation.