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半导体学报 2002
Analysis of Cross-Talk Effect in SOI Analog-Digital Mixed Integrated Circuits
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Abstract:
with two dimensional (2D) TMA medici simulator,the systematic analysis of cross talk behavior is presented for SOI analog digital mixed integrated circuits.It is found that the buried oxide nearly becomes transparent with the increase of frequency and the noise coupling can be decreased to a large extent by contacting the substrate to the ground.At the same time,the efficiency of different strategies for reducing cross talk such as trench isolation,capacitive guard ring and differential structure is studied.Besides,the effect of some extrinsic parameters on the cross talk behavior is also given.The results can serve as a guideline for designing low noise coupling SOI analog digital mixed IC's.