Recent Progress in SiC Power Elect ronic Devices and Fabrication Process
碳化硅电力电子器件及其制造工艺新进展

The huge potential of semiconductor SiC for improving performance of power devices has been initially realized by the commercialization of SiC power Schottky barrier diodes in the first year of the new century,which well predicts a revolutionary progress of power electronics in the near future.The current state of the art and the future potential of SiC power devices is reviewed in the viewpoint of advanced power electronic technology.It is shown that the advantage of SiC is not only a potential capability to make modern power devices operate at much higher voltages,temperatures and switching frequencies,but also reduce power losses substantially,which makes fuller use of the energy save advantage of power electronic technology.The current issues in SiC device processing technology are also analyzed based on the specific characteristics of SiC materials and realizing the outstanding performances of SiC power devices.