Annealing Behaviours of EPR "AsGa" in GaAs
砷化镓材料中EPR“As_(Ga)”的退火行为

Comparisons of Hamiltonian parameters of the EPR "As_(Ga)"in three kinds of GaAs samples(neutron-irradiated, plastically deformed and as-grown LEC) have been made. The variationsof concentration and photoquenching behaviour of the EPR "As_(Ga)" defects with annealingtemperature have systematically been investigated. The experimental results reported in thispaper further verify the nature of EPR "As_(Ga)" defects, namely, they may include some vacancycomplexes of the As_(Ga) antisite besides the isolated one.These results indicate that the conversionsbetween the EPR "As_(Ga)" defects and the other related point defects may take place duringannealing for the above-mentioned samples.They may be interpreted by means of Le ChatelierPrinciple in physicochemistry,the original concentrations of these defects and the strainenergy in crystals seeming to be the important factors for these conversion reactions.