Influence of Backsurface Ar+ Bombardment on theCharacteristics of n-MOSFET
背面Ar~+轰击对n~-沟MOSFET特性的影响

Influence of backsurface Ar + bombardment on the characteristics of n-MOSFET have been investigated.A low energy (550eV) argon-ion-beam is applied to bombard the backside of n-MOSFET,thus the electrical characteristics of the thre- shold voltage, the transconductance,channel conductance and effective inversion layer carrier mobility of the devices can be improved.As the bombardment time increases,the threshold voltage decreases at first,and then increases;but the change tends of the transconductance,channel conductance and effective inversion layer carrier mobility are on the contrary.It is proved that the improvement of the parameters is due to the decrease of interface state density and fixed charge density.