New Forward Gated-Diode Technique for Separating Front Gate Interface- from Oxide-Traps Induced by Hot-Carrier-Stress in SOI-NMOSFETs
新的正向栅控二极管技术分离热载流子应力诱生SOI NMOSFET界面陷阱和界面电荷的研究(英文)

The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is measured,and then the densities of the interface and oxide traps are separated independently.The experimental results show that the hot carrier stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot carrier stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot carrier stress on the generating of interface and oxide traps,which help to understand the degradation and reliability of the SOI MOSFETs.