A Model of a Single Electron Transistor of Metallic Tunneling Junctions and Its Validation
金属结单电子晶体管的模型建立及实验验证（英文）

Based on the orthodox theory,a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.Several parameters of the device,such as capacitance,resistance and temperature,are input into the model and thus the I-V curves are attained.These curves are consistent with those from other experiments;therefore,the model is verified.However,there still exists a difference between simulated results and experimental results,mainly comes from the stationary case of the master equation.In other words,precision of simulated results would be increased if the transient case of the master equation is considered.Moreover,the current increases exponentially at higher drain voltages,which is due to the fact that the barrier suppression is caused by the image charge potential.