Electronic Energy Spectra of GaN/AlxGa1-xN Self-Assembling Quantum Dots in a Well Structure
在量子阱中自组织量子点结构GaN/Al_xGa_(1-x)N的电子能谱

In the frame of effective mass approximation,the adiabatic approximation is applied to calculate the electronic energy spectra of the GaN/Al_ x Ga_ 1-x N self-assembleing quantum dots (QDs) in a well (DWELL) structure under various structural parameters.Results show that the energy spectra structure and the photoluminescence (PL) spectra wavelength are sensitive to the structural parameters of quantum dot and quantum well (QW).The computation suggests that the QDs with higher confining potential have higher electron and hole energy levels,and the QDs with large dimension have a lower electron and hole energy level,the wider QW and thinner self-assembling QDs wetting layer (WL) results to have low electron and hole energy level.The computation also suggests that the variation of structural parameters can make the PL peak wavelength shift slightly.