Mode Analysis of Graded-Index Separate-Confinement-Heterostructure Single-Quantum-Well (GRIN-SCH-SQW) Semiconductor Lasers
折射率缓变波导层分别限制单量子阱半导体激光器的模式分析

A method of lamination-iteration approach for analyzing the GRIN-SCH-SQW semicon-ductor lasers with guided layers of any index-profile has been proposed. The effects of theguided layer and its index-profile on the near-field pattern and its beam width, the far-fieldpattern and its angular width, optical confinement factor, and lasing threshold have been in-vestigated by the method, and compared with that obtained by the extended parabolic appro-ximation and that by abrupt guided layer structure.It is shown that the extended parabolicapproximation is not feasible for general application in this study.By the use of guided layerswith proper index-profile, the lasing threshold may be decreased further (e. g. in cases ofparabolic and linear profile), or the far-field angular width may be decreased further (e. g.in case of inverted parabolic profile).