Prediction of Breakdown Voltage of Asymmetric Linearly-Graded Junction by Equivalent Doping Profile Transformation Method
由等价掺杂转换理论得到非对称线性缓变P-N结的击穿特性(英文)

This report describes an equivalent doping profile transformation method with which the avalanche breakdown voltage of the asymmetric linearly graded junction was analytically predicted.The maximum breakdown voltage and the different depletion layer extension on the diffused side and substrate side are demonstrated in the report.The report shows the equivalent doping profile method is valid to predict the breakdown voltage of the complex P N junction.The analytical results agree with the experimental breakdown voltage in comparison with the abrupt junction and symmetric linearly graded junction approximations.