Indirect Tunnelling Capacity of the P-N Junction of the Narrow Band-Gap Semiconductors
窄禁带半导体的P-N结的间接隧道电容

The expression of the capacity caused by the indirect tunelling process is derived by usingthe detailed balance between the process of indirect tunelling via deep impurity level and theprocess of thermal excitation and trapping.This capacity appears only in a narrow range ofbias voltage around zero bias voltage.The C-V characteristic is not the usual monotonous fun-ction of voltage, but has a maximum and negative values in a range of bias voltage.Numeri-cal calculations are made.The shape of the calculated C-V curves is similar to that of the me-asured C-V curves obtained on the p-n junctions of narrow gap semiconductors Hg_(1-x)Cd_xTe.