Synthesis of Silicon Nitride Films by Ion Beam Enhanced Deposition
离子束增强沉积氮化硅薄膜生长及其性能研究

Silicon nitride films with stoichiometric ratio of Si_3N_4 have been synthesized by concurrentelectron beam evaporation of silicon and bombardment with nitrogen ions.The results showthat the component ratio of nitrogen to silicon in IBED silicon nitride films can be controlledand predicted by the arrival rate ratio of nitrogen to silicon.IR measurement shows that thecharacteristic absorption peak of IBED Si_3N_4 is located at wavenumber of 840 cm~(-1) and the re-fractive index ranges from 2.2 to 2.6. RBS, AES, TEM, SEM, ED and spreading resistance me-asurements were used for investigation of the depth profiles of composition and structure of si-licon nitride films synthesized by IBED.An intermixed layer is formed at the interface by knockon effects, and a silicon enriched layer is observed at the surface region of the film.Normallythe films were found to be amorphous but electron diffraction patterns taken from depositedlayer showed a certain crystallinity.The silicon nitride films prepared by IBED have drama-tically less oxygen content than that formed by non ion assisted deposition.