An In-Situ Extracting Method for Residual Stresses of a Multilayer Film by Full-Field Optical Measurement
MEMS多层膜残余应力全场光学在线测试

A novel in-situ extracting method for residual s tresses of a multilayer film based on back etching is proposed,in which only back films of the substrate need to be etched in turn and corresponding curvature radii needs to be measured.Then residual stress of each film layer can be obtained.It is verified by simulation and experiment that the novel method is a simple and accurate in-situ extracting method for residual stresses of the multilayer film with no destruction to front films.