Fabrication of a Porous Silicon New Substrate for a High Q Radio Frequency Integrated Inductor
适用于高品质射频集成电感的多孔硅新型衬底制备技术

A new method to grow porous silicon substrate from the back-end of silicon substrate is presented.High Q integrated inductors can be obtained at high frequencies with this kind of substrate,which has been proved by ASITIC simulator.High quality and thick porous silicon films are fabricated using this new technique.The influence of the velocity of growth ,time and current density on the porous silicon is achieved.The results can serve as a guideline for fabricating high quality integrated inductors based on silicon substrate.