Determination of Spin-Orbit Splitting of Valence Bands in Silicon by Means of High-Resolution Photoconductive Spectroscopy
硅价带自旋-轨道分裂的高分辨率光电导谱测定

Keywords: High-resolution photoconductive spectroscopy,High-purity silicon,Shallow,acceptors,Spin-orbit splitting
硅,光电导谱,价带自旋,轨道分裂

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Abstract:

采用高分辨率光电导谱观察到高纯区熔硅单晶中剩余硼受主从基态到各共振激发态的p_(1/2)系列跃迁谱线.考虑裂开P_(1/2)价带的非抛物线性,精确得到了硼杂质从基态到P_(1/2)价带的电离能E_1~*(硼)=88.45±0.01meV,进而获得硅价带的自旋-轨道分裂为△_o=42.62±0.01meV.

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