An Accurate Theoretical Calculations of Static and Dynamic Behaviors of Semiconductor Bistable Laser with Two-Section-Common-Cavity
电极条形双区共腔半导体双稳态激光器静态和瞬态行为的精确理论计算

A theoretical model involving the lateral carrier diffusion and laser field with modal distributionfor more accurately describing the physical process in the non-built-in gain guidedsemiconductor laser with stripe electrode and two-sec(?)ion-common-cavity is developed. Bywhich, the static bistability and switching behavior of the laser are calculated starting from theequipotential of the electrode self-consistently without any imposed-distribution, and the resultsare compared with that by the concentrated uniform approximation.It is found that the lasingthreshold current is significantly increased, the width of the bistability current range is decreased,and the switching time is increased due to the lateral carrier diffusion and the laser modalfield ditributions and as well as their interaction.It is proposed that to improve the charateristiesof semiconductor bistable laser, a structure with built-in refractive index guiding shouldbe used.