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半导体学报 2004
Precise Extraction of GaAs MESFET Small Signal Model Using Improved Genetic Algorithm
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Abstract:
An improved genetic algorithm is proposed for the extraction of GaAs MESFET small signal model.It has the following characteristics:floating encoding and continuous mutation;many genetic operators working together;individual optimized.The improved genetic algorithm can quickly search the global optimum independence of the initial values.This algorithm is successfully used to determine the small signal equivalent circuit of GaAs MESFET from the measured S parameters in the range of 0 1GHz to 10GHz and can fit measured S parameters very well.The results can be extrapolated well up to 20GHz.It is implemented by Matlab and can be easily applied to the model parameter extraction of HEMT,HBT,capacitor,and inductor.