Photoluminescence spectra of non-homogeneous a-Si:H layers
非均匀a-Si:H层的光致发光光谱研究

Photoluminescence spectra of a-Si:H-based structures deposited on glass substrate measured at 6K are presented.Their non-Gaussian character is interpreted as a result of presence of different phases in material.Presented results of analysis of numerical data obtained by fitting of these spectra indicates that they can be represented as a consequence of superposition of photoluminescence signal arising from two types of domains with different degrees of structural disordering.This is the issue of deposition process and corresponds to real situation from view of structural properties of amorphous hydrogenated silicon.