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无机材料学报 2001
Preparation and Characterization of Room Temperature NO2 Sensitive Y2O3-SnO2 Sol-Gel Thin Films
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Abstract:
Pure and Y2O3 doped SnO2 gas sensitive thin films were prepared by the sol-gel technique by using non-alkoxide SnCl2·2H2O ) Y(NO3)3·6H2O as precursors. The thermal decomposition and crystallization process of 1mol%Y2O3-SnO2 thin films and the effect of doping amount on the electrical and gas sensitive properties of SnO2 thin films were studied. The Y2O3-SnO2 film shows novel gas sensing properties (good sensitivity, high selectivity and quick response behavior) toward low concentration of NO2 at room temperature.