Influence of Ni Doping on the Thermoelectric Properties of Co4-xNixSb12
Ni掺杂对Co4-xNixSb12热电转换性能的影响

Skutterudite compound Co4-xNixSb12 was synthesized by the melting method and its thermal and electrical properties were measured in the temperature range of 300-850K. The carrier concentration and electrical conductivity increase with increasing Ni content substituting for Co. The absolute value of Seebeck coefficient decreases and Topt of Seebeck coefficient shifts to a higher temperature with the increase of Ni content. These different transport behaviors in the samples are ascribed to the introduction of extra electrons to the Skutterudite structure by Ni substitution. The lattice thermal conductivity of Co4-xNixSb12 is significantly depressed as compared to that of CoSb3 by introducing extra electron-phonon scattering mode. The maximum ZT value obtained for Co3.92Ni0.08Sb12 at 750K is about 0.55.