Structure and Electrical Properties of Te-Doped CdTe Thin Films Prepared by Close-Spaced-Sublimation Technique
近距离升华制备CdTe掺Te薄膜的结构与电性能研究

CdTe and Te-doped CdTe thin films were prepared by close-spaced-sublimation(CSS) technique. The composition, structure, surface and electrical properties of the films were studied by using XRF.XRD, SEM and HALL. The results show that the films deposited by CSS have good crystallization. Crystalline grain is 100 times bigger than that of the films deposited by RF method. Te doping changes the crystal characteristic of CdTe films. The proper Te doping can improve lattice growing of CdTe films, and cause lattice constant increasing. The films' resistivity decreases while mobility and carrier concentration increase, which indicates electrical conductivity of Te doped CdTe increases greatly.