Conductivity of Magnetron-sputtered Nanometer TiO2 Thin Films
磁控溅射制备纳米TiO2薄膜导电性的研究

The conductivity of nanometer TiO2 thin films was studied. The dependence of the conductivity of TiO2 thin films on the thickness of the film and the substrate materials were educed. The Ti02 films were deposited by reactive magnetron sputtering of Ti target in an Ar+O2 mixture in a conventional sputtering reactor. The thickness of the films varied in the range from 15nm to 225 nm. The electrical resistivity of the films was measured at room temperature in the air. The results show that the conductivity of TiO2 thin films varies from metal, semiconductor to nonconductor. This is attributed to the transfer of the electrons at the interface between the TiO2 and substrates, and the difference of work function determines the depth of the transfer of the electrons.