Activation Energy for the Crystallization of the New Type AgInSbTe Phase Change Films
新型AgInSbTe相变薄膜的结晶活化能研究

A new type AgInSbTe phase change film was prepared by direct magnetron sputtering. X-ray diffraction (XRD) spectra of the film in as-deposited and heat-treated states show the film changed from amorphous to crystalline states due to heat-treatment. By using differential scanning calorimetry (DSC) data of the amorphous film materials, measuring the peak temperature of crystallization at different heating rates, the mol activation energies for crystallization and frequency factors were calculated. By judging from the mol activation energies, the new type AglnSbTe phase change film has a high value of activation energies for crystallization and will be suitable to the high-speed phase change disks for the direct overwrite.