Fabrication of In-Al codoped ZnO nanobunches photodetectors
In, Al共掺杂ZnO纳米串光电探测器的组装与研究

High-density In-Al codoped ZnO(In,Al,ZnO) nanobunches are synthesized by using chemical vapor deposition method,which can be used to fabricate In,Al,ZnO nanobunches photodetectors.The ZnO nanobunches each have a hexagonal wurtzite structure. It is found that the average length of the nanobunches is ~5μm.The photoconduction mechanism and a series of photoelectric characteristics are studied including I-V characteristic measured in dark and UV illumination,responsivity and response time.The results indicate the presence of an internal gain mechanism.The response time is less than 0.5 s and decay time is about 23 s,so the fabricated device can indeed be used for light detection.