Theory and Application of SiC Synthesis by Multi-heat-source Furnace
多热源SiC合成炉温度场变化规律的模拟与计算

The thermal field of SiC synthesis furnace is plane, instantaneous and of inner thermal source. In the paper the temperature field of multi-heat-source furnace was simulated with the software ANSYS. To plane, the contribution of each furnace core to the whole temperature field was analyzed. To point, the change of temperature with time on the center point was studied. To line, the change of temperature with distance on the midline was studied. The results show that the splicing of the thermal field and shielding of each furnace core is the reason of multi-thermal-source furnaces saving power.