Influences of growth orientation on strain and strain relaxation of quantum dots
生长方向对量子点应变与应变弛豫的影响

Different growth orientations influence the mechanical properties and behavior of quantum dots, due to the anisotropy of elasticity and surface energy of the material. In this paper, the relations of the strain energy, strain relaxation energy and free energy to growth orientation are analyzed for the self-assembled InAs/GaAs semiconductor quantum dots, based on finite element method of cubic elasticity theory. The results show that the strain relaxation of the (211) quantum dots is biggest, and that of the (100) quantum dots is smallest. These can provide the theoretical basis for the growth of quantum dots in a controlled fashion.