Model of intrinsic carrier concentrationof [110]/(001)-uniaxial strained Si
[110]/(001)单轴应变Si本征载流子浓度模型

In this paper, the effect of uniaxial stress along 110] direction on the energy-band structure parameters of (001)-bulk Si is discussed, thereby we investigate the equilibrium carrier concentration and the expressions of effective density of state (DOS) in conduction and valence band, which contain explicit physical significance. The model of intrinsic carrier concentration is proposed by combining the expressions of DOS and bandgap. The pro- posed method in this paper is also applicable to modeling the intrinsic carrier concentration under the action of uniaxial stress along an arbitrary direction, and provides some references for design, mode- ling and simulation of similar uniaxial strained Si devices.