Synthesis and infrared up-conversion photostimulated luminescence properties of a novel optical storage material Sr2SnO4: Tb3 +, Li+
新型光存储材料Sr2SnO4: Tb3+, Li+ 的合成及其红外上转换光激励发光性能的研究

The novel electron trapping material of Sr2SnO4: Tb3+, Li+ for optical storage is synthesized by the solid state method. Stimulated by 980 nm infrared laser, the material shows intense up-conversion photostimulated luminescence. The ultraviolet light at 292 nm is an optimal writing source. The material has less shallow traps, which corresponds to its weak afterglow (less than 500 s). On the other hand, this material has lots of deep traps. Thus, the Sr2SnO4:Tb3 +, Li+ is a promising optical storage material. In addition, we propose the optical storage luminescence mechanism of Sr2SnO4:Tb3 +, Li +.