Micromagnetic simulation of magnetization reversal on the annular free layer with nick in magnetic random access memory
磁存储器环形带切口结构自由层磁化反转的微磁模拟

Based on magnetic tunnel junctions (MTJs), the magnetic random access memory with the pseudo-spin value film model, the annular structure with slanted cuts is used as free layer and the way to vary coercivity by changing thickness is discarded. With this improvement, the area resistance of the MTJs is reduced. The analysis of the cuts on the annular layer generated from the secondary effects of deposition in the IC process, is made by the micromagnetic simulations. The magnetization reversal characteristics from the analysis reveal the properties of low crosstalk, low RA, high magnetic reluctance, and strong anti-interference.