InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy
GaAs(001)衬底上分子束外延生长InNSb单晶薄膜

InNSb alloy films are prepared on GaAs (001) substrates by the N2 radio frequency plasma-assisted molecular beam epitaxy ( RF-MBE). The N composition and the micro-structure of the samples are characterized by atom force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The measurement results reveal that the films have smooth surfaces and good crystalline quality, the N composition can reach 0.84%(from XRD) and most of the N atoms in the samples are at the sites of Sb atoms. The transport properties of the samples are also characterized, and the results demonstrate that our samples have lower carrier concentrations and higher mobilities. Owing to the introduction of N, a condside rable reduction of room-temperature magnetoresistance is observed.