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物理学报  2006 

Colossal magnetoresistance effect in the perovskite-type La1-xPrx MnO3 thin films
La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

Keywords: pulsed,laser,deposition,(PLD),La1-xPrxMnO 3,electron-doped,colossal magnetoresistance
脉冲激光沉积,
,La1-xPrxMnO3,,电子,掺杂,,庞磁电阻

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Abstract:

The oxide La1-xPrxMnO3 (x=0.1, 0.2) thin film s howing colossal magnetoresistance has been epitaxially grown on (100) SrTiO 3 single-crystal substrate by pulsed-laser deposition. The films have a pe rovskite structure and perform the colossal magnetoresistance effect with the ma ximum magnetoresistance ratio of 95% under the magnetic field of 5 T. The valenc e of Pr is confirmed as +4 through XPS. Therefore the epitaxial film is most lik ely an electron-doped colossal magnetoresistance fihn.

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