Experimental studies on the electronic structure of pyrite FeS2 films prepared by thermally sulfurizing iron films
FeS2多晶薄膜电子结构的实验研究

Pyrite FeS2 films have been prepared by thermally sulfurizing iron films deposited by magnetron sputtering. The electronic structures were studies by X-ray absorption near edge structure and X-ray photoemission spectrum. The results show that an S 3p valence band with relatively higher intensity compared to the calculation Fermi level of Fe 3d states were detected. A second gap of 2.8eV in exists in 2-10eV range and a high density below the the unoccupied density of states was found above the conduction band which was 2.4eV by experimentally calculation. The difference between t2s and eg which were formed in an octahedral crystal field was computed to be 2.1eV.