A study on wavelength stability of GaN-based blue light emitting diodes
GaN基蓝光发光二极管的波长稳定性研究

Although GaN based blue and green light emitting diodes (LEDs) have already been commercialized,the variation of the electro luminescence wavelength of the LEDs along with the injection current remains a major problem. Furthermore, the full width at half maximum (FWHM) of the emission spectrum of the LEDs is relatively broad (typically greater than 25?nm). In this paper, high performance LEDs with InGaN/GaN multiple quantum wells were grown and fabricated by optimizing the growth conditions and the total strain in the structure. The emitting wavelength of our LEDs remains stable within 1?nm as the forward current varies from 0 to 120?mA. At a forward current of 20?mA, the FWHM of the emission spectrum is as low as 18?nm and remains basically constant as the forward current varies.