Optical properties of alloy states in GaNxAS1- x (x
GaNxAs1－x(x<0.01)中合金态的光学特性

A set of GaNxAs1-x samples with a small content of nit rogen (N)( <1%) were investigated by continuous_wave photoluminescence (PL), pulse_wave exc itation PL, and photo reflectance technology. Temperature_and excitation_depende nce of PL disclosed the intrinsic band gap properties of alloy states in GaNxAs1-x, which was extremely different from the N_related i mpurity states. At the same time, PR spectra were also studied in this work.