Effect of proton implantation on photoluminescence of self-assembled InAs/GaAs quantum dots
离子注入对InAs/GaAs量子点光学效质的影响

Both the effects of the intermixing induced by the implantation dose and the annealing temperature on the light-emission efficiency of the quantum dots are studied. The intensities of photoluminesce (PL) are determined by the carriers c apture time and non-radiative center lifetime.Annealing can partly eliminate the non-radiative center (NRC), so the NRC generation rate is a sublinear function of the proton dose (N). The carrier capture efficiency enhancement is induce d by intermixing and degradation by the implantation damage which mutually compe te, so there exists a critical implantation dose (NC). When N is less than NC, the intermixing is the main effect and the PL intensity increases with the implantation dose. On the other hand, when N is larger than N C, the implantation damge is so large that the intensity decreases wi th the do se. The higher the annealing temperature, the larger the NC becom es.