Preparation and growth of SrBi4Ti4O15 ferroelectric thin film by sol-gel method
SrBi4Ti4O15铁电薄膜的制备工艺及薄膜生长机理 研究

The stable strontium bismuth titanate (SBTi) precursor solution were prepared using strontium chloride, bismuth nitrate, tetrabulyl titranate as raw materials, with citric acid as complex agent, ethylene glycol as cross linker, and ethanol absolute, water, hydrochloric acid as solvents of tetrabulyl titranate, strontium chloride, bismuth nitrate, respectively. SBTi thin films with enhanced a-axis orientation were prepared on Pt/Ti/Si02/Si substrates by the Sol-Gel method. With the aid of ESEM and XRD, the effects of annealing time and the number of coatings on microstructure crystallization and growth behavior of SBTi thin films were investigated. The results indicate that the pyrochlore phase was restrained successfully by layer-by-layer rapid thermal annealing method. The crystallization of the film was enhanced with the increase of coating number. Because of the anisotropic growth of SBTi crystals and the suppressed growth in (119) direction by the thickness of single-annealed layer, the intensity of (200) and (119) peaks increase with the increase of layers, and the former increase more quickly.However, the intensity of (00l) peak decreased with the increase of layers, so the relative intensity of (200) I(200)/I(119),I(200)/I(0010)] and (119) I(119)/I(0010)] increases with the increase of layers.